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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 3. P. 279-284.
Physical mechanisms and models
of long-term transformations of radiative recombination
in n-GaAs due to the magnetic field treatments
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
E-mail: redko.roma@gmail.com
Abstract. Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
Keywords: magnetic field treatments, photoluminescence, dislocation impurity complex, random variable, cyclotron frequency, electromagnetic radiation.
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