Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 19 N 3
DOI: https://doi.org/10.15407/spqeo19.03

Luminescent converter of solar light into electrical energy. Review
M.R. Kulish, V.P. Kostylyov, A.V. Sachenko, I.O. Sokolovskyi, D.V. Khomenko, A.I. Shkrebtii
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 229-247.
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Degradation processes in LED modules
V.M. Sorokin, Ya.Ya. Kudryk, V.V. Shynkarenko, R.Ya. Kudryk, P.O. Sai
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 248-254.
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Transducer based on surface plasmon resonance with thermal modification of metal layer properties
K.V. Kostiukevych
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 255-266.
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Formation of nanostructured state in LaBGeO5 monolithic glass using pulsed magnetic fields
A.S. Doroshkevich, A.V. Shylo, G.K. Volkova, V.A. Glazunova, L.D. Perekrestova, S.B. Lyubchik, T.E. Konstantinova
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 267-272.
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Nanocrystalline silicon carbide films for solar cells
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 273-278.
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Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
G.V. Milenin, R.A. Redíko
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 279-284.
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Multiferroic based on nematic liquid crystal and nanoparticles
O.V. Kovalchuk, T.M. Kovalchuk, N.M. Kucheriavchenkova, V.V. Sydorchuk, S.V. Khalameida
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 285-289.
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Peculiarities of near-electrode relaxation processes in the polyethylene melt filled with graphite and carbon black
Ya.A. Kuryptya, B.M. Savchenko, O.V. Kovalchuk, T.M. Kovalchuk, T.S. Shostak
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 290-294.
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Electrical properties of InSb p-n junctions prepared by diffusion methods
A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 295-298.
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Possible method for evaluation of virus, bacteria and yeasts infectivity by optical measurements
N.M. Rusinchuk, V.Z. Lozovski, O.A. Shydlovska, N.M. Zholobak
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 299-302.
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Influence of the presence of a fluxing agent and its composition on the spectral characteristics of ZnS(Cu) obtained by self-propagating high- temperature synthesis
Yu.Yu. Bacherikov, O.B. Okhrimenko, A.G. Zhuk, R.V. Kurichka, A.V. Gilchuk
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 303-306.
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Structural, electrical and optical investigations of Cu6PS5 Br-based thin film deposited by HiTUS technique
I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak, A.V. Bendak, V.Yu. Izai, P. Kus, M. Mikula
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 307-310.
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Classic test Ronchi and its variants for quality control of various optical surfaces
A.S. Malenko, V.N. Borovytsky
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 311-314.
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Local vibrational density of states in disordered graphene
D.L. Kardashev, K.D. Kardashev
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 315-317.
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