Luminescent converter of solar light into electrical
energy. Review M.R. Kulish, V.P. Kostylyov, A.V. Sachenko,
I.O. Sokolovskyi, D.V. Khomenko, A.I. Shkrebtii Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 229-247. | Full text (PDF)
Degradation processes in LED modules V.M. Sorokin, Ya.Ya. Kudryk, V.V. Shynkarenko,
R.Ya. Kudryk, P.O. Sai Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 248-254. | Full text (PDF)
Transducer based on surface plasmon resonance
with thermal modification of metal layer
properties K.V. Kostiukevych Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 255-266. | Full text (PDF)
Formation of nanostructured state in LaBGeO5
monolithic glass using pulsed magnetic fields A.S. Doroshkevich, A.V. Shylo, G.K. Volkova,
V.A. Glazunova, L.D. Perekrestova, S.B. Lyubchik,
T.E. Konstantinova Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 267-272. | Full text (PDF)
Nanocrystalline silicon carbide films for solar cells S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin,
V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 273-278. | Full text (PDF)
Physical mechanisms and models of long-term
transformations of radiative recombination in
n-GaAs due to the magnetic field treatments G.V. Milenin, R.A. Red’ko Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 279-284. | Full text (PDF)
Multiferroic based on nematic liquid crystal and
nanoparticles O.V. Kovalchuk, T.M. Kovalchuk,
N.M. Kucheriavchenkova, V.V. Sydorchuk,
S.V. Khalameida Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 285-289. | Full text (PDF)
Peculiarities of near-electrode relaxation processes
in the polyethylene melt filled with graphite and
carbon black Ya.A. Kuryptya, B.M. Savchenko, O.V. Kovalchuk,
T.M. Kovalchuk, T.S. Shostak Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 290-294. | Full text (PDF)
Electrical properties of InSb p-n junctions
prepared by diffusion methods A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 295-298. | Full text (PDF)
Possible method for evaluation of virus, bacteria
and yeasts infectivity by optical measurements N.M. Rusinchuk, V.Z. Lozovski, O.A. Shydlovska,
N.M. Zholobak Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 299-302. | Full text (PDF)
Influence of the presence of a fluxing agent and its
composition on the spectral characteristics of
ZnS(Cu) obtained by self-propagating high-
temperature synthesis Yu.Yu. Bacherikov, O.B. Okhrimenko, A.G. Zhuk,
R.V. Kurichka, A.V. Gilchuk Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 303-306. | Full text (PDF)
Structural, electrical and optical investigations of
Cu6PS5 Br-based thin film deposited by HiTUS
technique I.P. Studenyak, M.M. Kutsyk, V.I. Studenyak,
A.V. Bendak, V.Yu. Izai, P. Kus, M. Mikula
Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 307-310. | Full text (PDF)
Classic test Ronchi and its variants for quality
control of various optical surfaces A.S. Malenko, V.N. Borovytsky Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 311-314. | Full text (PDF)
Local vibrational density of states in disordered
graphene D.L. Kardashev, K.D. Kardashev Semiconductor physics, quantum electronics and optoelectronics. 2016. V.19, N.3. P. 315-317. | Full text (PDF)
