Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 3. P. 307-310.
DOI: https://doi.org/10.15407/spqeo19.03.307

Structural, electrical and optical investigations of Cu6PS5Br-based thin film deposited by HiTUS technique
I.P. Studenyak1, M.M. Kutsyk1, V.I. Studenyak1, A.V. Bendak1, V.Yu. Izai1, P. Kúš2, M. Mikula2

1Uzhhorod National University, Faculty of Physics, 3 Narodna Sq., 88000 Uzhhorod, Ukraine
2Comenius University, Faculty of Mathematics, Physics and Informatics, Mlynska dolina, 84248 Bratislava, Slovakia, E-mail:studenyak@dr.com

Abstract. Cu6.35P1.77S4.72Br0.15 thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM investigations indicate formation of periodical “forest-like” quasi-two-dimensional pillared structure. Electrical conductivity of Cu6.35P1.77S4.72Br0.15 thin film was measured in the temperature interval 4.5…300 K, three regions with different activation energy were revealed. Optical constants were obtained using the technique of spectroscopic ellipsometry and used for calculation of optical absorption spectrum. Optical absorption edge has an exponential form, the Urbach energy shows the significant disordering in Cu6.35P1.77S4.72Br0.15 thin film.

Keywords: thin film, high target utilization sputtering, X-ray diffraction, electrical conductivity, optical constants.

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