Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (3), P. 314-318 (2017).

The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
A.I. Ievtushenko1, M.G. Dusheyko2, V.A. Karpyna1, O.I. Bykov1, P.M. Lytvyn3, O.I. Olifan1, V.A. Levchenko2, A.A. Korchovyi3, S.P. Starik4, S.V. Tkach4, E.F. Kuzmenko4, G.V. Lashkarev1

1I. Frantsevich Institute for Problems of Material Science, NAS of Ukraine, 3, Krzhizhanovskogo str., 03680 Kyiv, Ukraine; e-mail:
2National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”, 37, prospect Peremohy, 03056 Kyiv, Ukraine
3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
4V. Bakul Institute for Superhard Materials, NAS of Ukraine, 2, Avtozavodskaya str., 04074 Kyiv, Ukraine

Abstract. For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fourier transform infrared spectrometry and optical transmission measurements have been discussed. It was shown that the increase of substrate temperature caused formation of the CuAlO2 phase. Additional optimization of technological parameters of growth and post-growth temperature annealing are necessary to obtain single-phase CuAlO2 films.

Keywords: Cu-Al-O films, XRD, optic properties, FTIR, morphology.

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