Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 20 N 3
DOI: https://doi.org/10.15407/spqeo20.03

Infrared and terahertz in biomedicine
F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 273-283 (2017).
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Ellipsometry and optical spectroscopy of low-dimensional family TMDs
V.G. Kravets, V.V. Prorok, L.V. Poperenko, I.A. Shaykevich
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 284-296 (2017).
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Raman study of L-Asparagine and L-Glutamine molecules adsorbed on aluminum films in a wide frequency range
B.O. Golichenko, V.M. Naseka, V.V. Strelchuk, O.F. Kolomys
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 297-304 (2017).
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On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra
K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 305-313 (2017).
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The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method
A.I. Ievtushenko, M.G. Dusheyko, V.A. Karpyna, O.I. Bykov, P.M. Lytvyn, O.I. Olifan, V.A. Levchenko, A.A. Korchovyi, S.P. Starik, S.V. Tkach, E.F. Kuzmenko, G.V. Lashkarev
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 314-318 (2017).
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Gross–Tulub polaron functional in the region of intermediate and strong coupling
N.I. Kashirina
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 319-324 (2017).
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Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids
V.F. Onyshchenko, L.A. Karachevtseva, O.O. Lytvynenko, M.M. Plakhotnyuk, O.Y. Stronska
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 325-329 (2017).
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Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
P.V. Parfenyuk, A.A. Evtukh, I.M. Korobchuk, V.I. Glotov, V.V. Strelchuk
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 330-334 (2017).
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Effective polycrystalline sensor of ultraviolet radiation
S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, Â.S. Àtdaev, M.V. Yaroshenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 335-339 (2017).
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I127 NQR spectra of Pb1–xCdxI2 and (BiI3)(1–x)(PbI2)x of mixed layered semiconductors
I.G. Vertegel, E.D. Chesnokov, O.I. Ovcharenko, L.S. Ivanova, Yu.P. Gnatenko, I.I. Vertegel
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 340-343 (2017).
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Nanograin boundaries and silicon carbide photoluminescence
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 344-348 (2017).
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Quantitative Optical Trapping and Optical Manipulation of Micro Sized Objects
Rania Sayed
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 349-354 (2017).
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Modeling of X-ray rocking curves for layers after two-stage ion-implantation
O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 355-361 (2017).
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Enhancing sensitivity of SPR sensors using nanostructured Au chips coated with functional plasma polymer nanofilms
I.Z. Indutnyi, Yu.V. Ushenin, D. Hegemann, M. Vandenbossche, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukaniuk, P.M. Lytvyn, R.V. Khrystosenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 362-368 (2017).
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Structure and Raman spectra of (Cu6PS5I)1–x(Cu7PS6)x mixed crystals
I.P. Studenyak, M.M. Luchynets, V.Yu. Izai, A.I. Pogodin, O.P. Kokhan, Yu.M. Azhniuk, D.R.T. Zahn
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 369-374 (2017).
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The influence of the guest cavitations loading degree in fractal nanohybrids GaSe<β-cyclodextrin<FeSO4>> on the current passing and polarization processes. The giant “battery spin” effect at room temperature.
F.O. Ivashchyshyn, I.I. Grygorchak, O.I. Hryhorchak
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 375-381 (2017).
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