Infrared and terahertz in biomedicine F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 273-283 (2017). | Full text (PDF)
Ellipsometry and optical spectroscopy of
low-dimensional family TMDs
V.G. Kravets, V.V. Prorok, L.V. Poperenko,
I.A. Shaykevich
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 284-296 (2017). | Full text (PDF) Raman study of L-Asparagine and L-Glutamine molecules adsorbed on aluminum films in a wide frequency range B.O. Golichenko, V.M. Naseka, V.V. Strelchuk,
O.F. Kolomys
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 297-304 (2017). | Full text (PDF) On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk,
A.B. Lyapina
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 305-313 (2017). | Full text (PDF) The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method A.I. Ievtushenko, M.G. Dusheyko, V.A. Karpyna,
O.I. Bykov, P.M. Lytvyn, O.I. Olifan, V.A. Levchenko, A.A. Korchovyi, S.P. Starik, S.V. Tkach,
E.F. Kuzmenko, G.V. Lashkarev
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 314-318 (2017). | Full text (PDF) Gross–Tulub polaron functional in the region
of intermediate and strong coupling
N.I. Kashirina
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 319-324 (2017). | Full text (PDF) Effective lifetime of minority carriers in black silicon nano-textured by cones and pyramids V.F. Onyshchenko, L.A. Karachevtseva,
O.O. Lytvynenko, M.M. Plakhotnyuk, O.Y. Stronska
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 325-329 (2017). | Full text (PDF) Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface P.V. Parfenyuk, A.A. Evtukh, I.M. Korobchuk,
V.I. Glotov, V.V. Strelchuk
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 330-334 (2017). | Full text (PDF) Effective polycrystalline sensor of ultraviolet radiation S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina,
K.B. Krulikovska, G.I. Sheremetova, Â.S. Àtdaev,
M.V. Yaroshenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 335-339 (2017). | Full text (PDF) I127 NQR spectra of Pb1–xCdxI2 and (BiI3)(1–x)(PbI2)x
of mixed layered semiconductors
I.G. Vertegel, E.D. Chesnokov, O.I. Ovcharenko,
L.S. Ivanova, Yu.P. Gnatenko, I.I. Vertegel
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 340-343 (2017). | Full text (PDF) Nanograin boundaries and silicon carbide photoluminescence S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin,
V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 344-348 (2017). | Full text (PDF) Quantitative Optical Trapping and Optical Manipulation of Micro Sized Objects Rania Sayed
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 349-354 (2017). | Full text (PDF) Modeling of X-ray rocking curves for layers after two-stage ion-implantation O.I. Liubchenko, V.P. Kladko, O.Yo. Gudymenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 355-361 (2017). | Full text (PDF) Enhancing sensitivity of SPR sensors using nanostructured Au chips coated with functional plasma polymer nanofilms I.Z. Indutnyi, Yu.V. Ushenin, D. Hegemann,
M. Vandenbossche, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukaniuk, P.M. Lytvyn, R.V. Khrystosenko
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 362-368 (2017). | Full text (PDF) Structure and Raman spectra of
(Cu6PS5I)1–x(Cu7PS6)x mixed crystals
I.P. Studenyak, M.M. Luchynets, V.Yu. Izai,
A.I. Pogodin, O.P. Kokhan, Yu.M. Azhniuk,
D.R.T. Zahn
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 369-374 (2017). | Full text (PDF) The influence of the guest cavitations loading degree in fractal nanohybrids
GaSe<β-cyclodextrin<FeSO4>> on the current passing and polarization processes. The giant “battery spin” effect at room temperature.
F.O. Ivashchyshyn, I.I. Grygorchak, O.I. Hryhorchak
Semiconductor physics, quantum electronics and optoelectronics, 20 (3), P. 375-381 (2017). | Full text (PDF)