Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (3), P. 335-339 (2017).

Effective polycrystalline sensor of ultraviolet radiation
S.Yu. Pavelets, Yu.N. Bobrenko, T.V. Semikina, K.B. Krulikovska, G.I. Sheremetova, В.S. Аtdaev, M.V. Yaroshenko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03680 Kyiv, Ukraine Tel.: 38 (044) 525-6200; e-mail:

Abstract. Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.

Keywords: polycrystalline UV sensor, cadmium sulfide, copper chalcogenide, surface-barrier structure, energy band offset diagram.

Full Text (PDF)

Back to Volume 20 N3

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.