Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (3), P. 282-287 (2018).

Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology
A.I. Klimovskaya, Yu.Yu. Kalashnyk * , A.T. Voroshchenko, O.S. Oberemok, Yu.M. Pedchenko, P.M. Lytvyn

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine

Abstract. In spite of the fact that, a great deal of experimental research has been published, there is a lack of good understanding of silicon nanowires growth to exert control over important properties of the system, though it presents the simplest system like gold on silicon substrate. In the current research, to find the best conditions to grow silicon nanowires with prespecified properties, we studied various technological regimes both of growth-seed formation and conditions of silicon nanowires growth.

Keywords: silicon nanowires, gold enhanced growth, CVD-technology.

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