Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (3), P. 299-309 (2019).

Nanosized levels of the self-organized structures in the non-crystalline semiconductors As–S(Se) system
M.I. Mar'yan1, N.V. Yurkovych1*, V. Seben2

1Uzhhorod National University, 45, Voloshyna Str., 88000 Uzhhorod, Ukraine *
2University of Presov, 1, 17 November Str., 08116 Presov, Slovakia

Abstract. A synergetic model of the transition to a non-crystalline state is proposed, which enables us to investigate the temperature dependence of the microscopic parameters (mean-square displacements, the proportion of atoms in soft atomic configurations, power constants) under the influence of the external control parameter – the cooling velocity. Their analysis has been performed on the basis of experimental researches for non-crystalline semiconductors of the system As–S(Se). It has been shown that formation of self-organized structures in the non-crystalline solids is carried out in accordance with the technological conditions of obtaining as a method of the system self-organization. The dependence of the period and lifetime of self-organized structures on the cooling velocity has been studied. The established value of the period of spatial inhomogeneity Lc ≈ 10…102 Å correlates with the nanosized midlle order in non-crystalline materials of the system As-S(Se) and decreases with increasing the cooling velocity.

Keywords: ractality, non-crystalline semiconductors, self-organized structures, synergetics, three-dimensional bifurcation diagram.

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