Semiconductor Physics, Quantum Electronics & Optoelectronics, 22 (3), P. 361-365 (2019).
DOI: https://doi.org/10.15407/spqeo22.03.361
Effect of the doping method on luminescent properties of ZnS:Ag
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03680 Kyiv
E-mail: yuyu@isp.kiev.ua
Abstract. Effect of doping the method on luminescent characteristics of dispersed ZnS doped with Ag has been studied in this work. The analysis of ratio of the intensity of photoluminescence bands related with the centres caused by Ag impurity and the intrinsic defects has led to the conclusion that formation of dispersed ZnS:Ag prepared using the self-propagating high-temperature synthesis (SHS) has several advantages: doping occurs directly in the process of material synthesis, possibility of simultaneous preparation of two fractions with different particle sizes, in ZnS:Ag-SHS with particle sizes greater than 20 nm there is a lower concentration of defects as compared to that in ZnS:Ag obtained using the thermal doping method.
Keywords: self-propagating high-temperature synthesis, thermal doping method, photoluminescence, ZnS, Ag..
Yu.Yu. Bacherikov1, A.G. Zhuk1, O.B. Okhrimenko1*, E.Yu. Pecherskaya-Gromadskaya2, V.V. Kidalov3, S.V. Optasyuk4
2National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”,
37, prosp. Peremohy Ave., 03506 Kyiv, Ukraine
3Berdyansk State Pedagogical University,
4, Shmidta str., 71100 Berdyansk, Ukraine
4Ivan Ohienko Kamyanets-Podilsky National University,
61, Ogienko str., 32300 Kamyanets-Podilsky, Ukraine
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