References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 23 (3) P. 290-293 (2020).

References

1. Leyderman A.Yu., Minbaeva M.K. Mechanism of rapid growth of the direct current in semiconductor diode structures. Semiconductors. 1996. 30, No. 11. P. 905-909.

2. Leyderman A.Yu., Khashaev M.M. Features of recombination in AIIIBV semiconductors. Reports of the Academy of Sciences RUz. 2012. No. 3. P. 22-24 (in Russian).

3. Leyderman A.Yu., Stelmakh V.G. Recombination in semiconductors with deep impurities. Applied Solar Energy. 2008. 44, No 3. P. 10-14. https://doi.org/10.3103/S0003701X08040105

4. Leyderman A.Yu. Recombination in semiconductors. Course of summer school about renewal sources of energy. UNESCO in Uzbekistan, Tashkent, 2007. P. 136-141.

5. Lang D.W., Logan R.A. Large lattice relaxation model for persistent conductivity in compound semiconductors. Phys. Rev. Lett. 1977. 39, No 10. P.635-638. https://doi.org/10.1103/PhysRevLett.39.635

6. Grin V.F., Lyubchenko A.V., Salkov E.A., Sheinkman M.K. Recombination through donor-acceptor complexes in CdS single crystals. Fizika Tekhnika Poluprovodnikov. 1975. 9, No 2. P. 303-310 (in Russian).