Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (3), P. 290-293 (2020).

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity
A.Yu. Leyderman1, A.K. Uteniyazov2, M.T. Nsanbaev3

1Physico-Technical Institute of SPA “Physics-Sun”, Uzbekistan Academy of Sciences, Uzbekistan, 100084, Tashkent, Chingiz Aytmatov str., 2B E-mail:
2Karakalpak State University named after Berdakh, Uzbekistan, Republic of Karakalpakstan, 230012 Nukus, Abdirov str., 1 E-mail:
3Nukus State Pedagogical Institute named after Ajiniyaz Republic of Karakalpakstan, Nukus, P. Seyitov str.

Abstract. The recombination rate of non-equilibrium carriers has been calculated for the model of the semiconductor with donor-acceptor pairs, the recombination activity of which decreases during excitation. It has been shown that, even at a very low inertia of intra-complex exchange, this process can lead to decreasing the recombination rate. The obtained results demonstrate a principal distinction from the classical Shockley–Read statistics.

Keywords:recombination, donor-acceptor pairs, decrease of recombination activity.

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