Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (3), P. 302-307 (2020).

Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field
R.A. Redko1, 2, G.V. Milenin1, V.V. Milenin1, S.M. Redko1

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, Ukraine
2State University of Telecommunications, 7, Solomyanska str., 03680 Kyiv, Ukraine E-mail:;

Abstract. In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defects transformation due to the random events related with defect subsystem modification has been proposed. The radiation power of electromagnetic waves emitted by electrons in the studied semiconductor has been estimated. Fitted parameters for the long-term transformation intensity of photoluminescence and diffusion factor for appearing defects have been calculated.

Keywords:photoluminescence, dislocation, random event, resonance, ion-plasma frequency, weak magnetic field, microwave radiation.

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