The advancement of silicon-on-insulator (SOI) devices and their basic properties T.E. Rudenko, A.N. Nazarov, V.S. Lysenko
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 227-252 (2020).
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Semiconductor physics
Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review) Yu.Yu. Bacherikov, R.V. Konakova,
O.B. Okhrimenko
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 253-259 (2020).
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Structural and impedance studies of copper-enriched (Cu0.75Ag0.25)7SiS5I-based ceramics I.P. Studenyak, A.I. Pogodin, I.A. Shender,
S.M. Bereznyuk, M.J. Filep, O.P. Kokhan,
P. Kopcansky
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 260-266 (2020).
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Study of structural, electrical and optical properties of MoRe0.001Se1.999 single crystal A.M. Vora
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 267-270 (2020).
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Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes A. Latreche
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 271-275 (2020).
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Studying the properties of Gd2O3–WO3–CaO–SiO2–B2O3 glasses doped with Tb3+ Nawarut Jarucha, Nuanthip Wantana,
Thanapong Sareein, Jakrapong Kaewkhao
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 276-281 (2020).
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Energy of interaction between polarons
and spatial configuration of bipolaron
in two-dimensional systems N.I. Kashirina, Ya.O. Kashyrina, O.A. Korol,
O.S. Roik
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 282-289 (2020).
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Recombination statistics of non-equilibrium carriers in the model of semiconductor
with donor-acceptor pairs possessing
variable recombination activity A.Yu. Leyderman, A.K. Uteniyazov,
M.T. Nsanbaev
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 290-293 (2020).
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Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method V.V. Tsybulenko, S.V. Shutov, S.Yu. Yerochin
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 294-301 (2020).
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Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field R.A. Redko, G.V. Milenin, V.V. Milenin,
S.M. Redko
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 302-307 (2020).
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Hetero- and low-dimensional structures
Width of the surface plasmon resonance line
in spherical metal nanoparticles A.A. Biliuk, O.Yu. Semchuk, O.O. Havryliuk
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 308-315 (2020).
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Optics
High-coherent oscillations in IR spectra of macroporous silicon with nanocoatings L.A. Karachevtseva, O.O. Lytvynenko
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 316-322 (2020).
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Polarization holography in azobenzene polymeric films prepared using the new chemical method N.A. Davidenko, I.I. Davidenko, V.V. Kravchenko, V.A. Pavlov, V.V. Tarasenko, N.G. Chuprina
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 323-328 (2020).
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Optoelectronics and optoelectronic devices
Software controlling the LED bar graph displays A.V. Bushma, A.V. Turukalo
Semiconductor physics, quantum electronics and optoelectronics, 23 (3),
P. 329-335 (2020).
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