Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (3), P. 248-254 (2021).

Non-recombination injection mode
A.Yu. Leyderman 1, R.A. Ayukhanov2, R.M. Turmanova2, A.K. Uteniyazov3*, E.S. Esenbaeva3

1Physical-Technical Institute of SPA “Physics-Sun”, Uzbekistan Academy of Sciences,
Uzbekistan, 100084, Tashkent, Chingiz Aytmatov str., 2B
2Research Institute of Semiconductor Physics and Microelectronics
under National University of Uzbekistan named after Mirzo Ulugbek,
Uzbekistan, 100057, Tashkent, Yangi Olmazor str., 20
3Karakalpak State University named after Berdakh,
Uzbekistan, Republic of Karakalpakstan,
230012 Nukus, Abdirov str., 1

Abstract. A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.

Keywords: non-recombination injection mode, accumulation of charge carriers at the n-n+ junction, ambipolar diffusion, drift of carriers.

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