¹Physical-Technical Institute of SPA “Physics-Sun”, Uzbekistan Academy of Sciences,
Uzbekistan, 100084, Tashkent, Chingiz Aytmatov str., 2B
²Research Institute of Semiconductor Physics and Microelectronics
under National University of Uzbekistan named after Mirzo Ulugbek,
Uzbekistan, 100057, Tashkent, Yangi Olmazor str., 20
³Karakalpak State University named after Berdakh,
Uzbekistan, Republic of Karakalpakstan,
230012 Nukus, Abdirov str., 1
*E-mail: abat-62@mail.ru

Abstract. A new type of injection regime is considered – non-recombination one, which can be realized in the forward direction of the current in structures of the p-n-n+ type under conditions of opposite directions of ambipolar diffusion and drift of non-equilibrium carriers. This is possible only if the accumulation at the n-n+ junction is stronger than the injection through the p-n junction, i.e., the concentration of carriers at the boundary of the n-base with the n-n+ junction is higher than their concentration at the boundary of the n-base with the p-n junction. In this mode, the dependences of the current on the voltage of the type J ~ V, and then J ~ V2 appear. Experimentally, such a behavior of the current-voltage characteristic is observed for the Al–Al2O3–CdTe structure.

Keywords: non-recombination injection mode, accumulation of charge carriers at the n-n+ junction, ambipolar diffusion, drift of carriers.

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References

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