Electrical properties of cation-substituted Ag7(Si1-xGex)S5I single crystals I.P. Studenyak, A.I. Pogodin, I.A. Shender, M.J. Filep, O.P. Kokhan, P. Kopcansky Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 241-247 (2021).
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Non-recombination injection mode A.Yu. Leyderman, R.A. Ayukhanov, R.M. Turmanova, A.K. Uteniyazov, E.S. Esenbaeva Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 248-254 (2021).
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Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon K.À. Ismailov, X.M. Iliev, M.O. Tursunov, B.K. Ismaylov Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 255-260 (2021).
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Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals V.V. Strelchuk, A.S. Nikolenko, P.M. Lytvyn, S.O. Ivakhnenko, T.V. Kovalenko, I.M. Danylenko, S.V. Malyuta Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 261-271 (2021).
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Preparation of quaternary compounds Cu2ZnSnS4 by using the self-propagating
high-temperature synthesis Yu.Yu. Bacherikov, M.N. Mirzayev, A.G. Zhuk, O.B. Okhrimenko, N.V. Doroshkevich, V.V. Kidalov, V.Yu. Goroneskul Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 272-276 (2021).
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Physics of microelectronic devices
Measuring of an unknown voltage by using single electron transistor based voltmeter A.K. Biswas Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 277-287 (2021).
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Hetero- and low-dimensional structures
The model of potential barrier appearing in a hydrolayer localized in a two-layer porous nanostructure
Yu.Yu. Bacherikov, O.B. Okhrimenko, V.Yu. Goroneskul, V.V. Ponomarenko, A.V. Gilchuk, S.K. Tytov, A.I. Lyubchyk Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 288-294 (2021).
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Optics
Influence of the reagents’ ratio on photoelectric and optical properties of perovskite films for photovoltaics
V.P. Kostylyov, A.V. Sachenko, I.O. Sokolovskyi, V.M. Vlasiuk, P.V. Torchyniuk, O.I. V’yunov, A.G. Belous, A.I. Shkrebtii Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 295-303 (2021).
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The approaches for localized surface plasmon resonance wavelength position tuning. Short review
P.V. Demydov, A.M. Lopatynskyi, ².². Hudzenko and V.I. Chegel Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 304-311 (2021).
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The boson peak and the first sharp diffraction peak in (As2S3)x(GeS2)1-x glasses
A.V. Stronski, T.S. Kavetskyy, L.O. Revutska, I. Kaban, P. Jovari, K.V. Shportko, V.P. Sergienko, M.V. Popovych Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 312-318 (2021).
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Optoelectronics and optoelectronic devices
Simulation and characterization of planar high-efficiency back contact silicon solar cells
A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, V.M. Vlasiuk, I.O. Sokolovskyi, B.F. Dvernikov, V.V. Chernenko, M.A. Evstigneev Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 319-327 (2021).
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Influence of spectral characteristics inherent to cameras on color rendering in the multimedia images
V.V. Pyliavskyi Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 328-334 (2021).
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Realization of 3D reflectors by using metal-air and semiconductor-air based photonic structures at three communication windows
S.P. Mohanty, S.K. Sahoo, C.S. Mishra, A. Panda, G. Palai Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 335-340 (2021).
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Numerical simulation of perovskite solar cell with different material as electron transport layer using SCAPS-1D Software
K. Bhavsar, P.B. Lapsiwala
Semiconductor physics, quantum electronics and optoelectronics, 24 (3), P. 341-347 (2021).
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