Semiconductor Physics, Quantum Electronics and Optoelectronics, 24 (3) P. 255-260 (2021).
DOI: https://doi.org/10.15407/spqeo24.03.255


References

1. Saparniyazova Z.M., Ismailov K.A., Uteniyazov A.K., Kamalov Kh.U. Effect of the diffusion temperature on interaction of clusters with impurity atoms in silicon. Semiconductor Physics, Quantum Electronics & Optoelectronics. 2021. 24, No 1. P. 22-25. https://doi.org/10.15407/spqeo24.01.022

2. Iliev Kh.M., Saparniyazova Z.M., Ismailov K.A., and Madzhitov M.Kh. Formation of nanoclusters of gadolinium atoms in silicon. Surf. Eng. Appl. Electrochem. 2011. 47, No 1. P. 1-3. https://doi.org/10.3103/S1068375511010066

3. Klimanov, E.A. Formation of thermal defects in silicon grown by means of float zone melting. J. Commun. Technol. Electron. 2017. 62, No 9. P. 1066-1073. https://doi.org/10.1134/S1064226917090121

4. Bakhadyrkhanov M.K., Iliev Kh.M., Tachilin S.A. et al. Impurity photovoltaic effect in silicon with multicharge Mn clusters. Appl. Sol. Energy. 2008. 44, No 2. P. 132-134. https://doi.org/10.3103/S0003701X08020151

5. Bakhadyrkhanov M.K., Saparniyazova Z.M., Iliev Kh.M., and Ismailov K.A. Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon. Inorg Mater. 2015. 51, No 8. P. 767-771. https://doi.org/10.1134/S0020168515070031

6. Nakashima H., Hashimoto K. Deep impurity levels and diffusion coefficient of manganese in silicon. J. Appl. Phys. 1991. 69, No 3. P. 1440-1445. https://doi.org/10.1063/1.347285

7. Bakhadyrkhanov M.K., Mavlonov G.Kh., Isamov S.B. et al. Transport properties of silicon doped with manganese via low-temperature diffusion. Inorg Mater. 2011. 47, No. 5. P. 479-483. https://doi.org/10.1134/S0020168511050062

8. Bakhadyrkhanov M.K., Mavlyanov A.S., Sodikov U.K., Khakkulov M.K. Silicon with binary elementary cells as a novel class of materials for future photoenergetics. Appl. Sol. Energy. 2015. 51, No 4. P. 258-261. https://doi.org/10.3103/S0003701X1504009X

9. Saparniyazova Z.M., Bakhadyrkhanov M.K., Sattarov O.E. et al. Interaction between multiply charged manganese nanoclusters. Inorg. mater. 2012. 48, No 4. P. 325-328. https://doi.org/10.1134/S0020168512030144

10. Bakhadirkhanov M.K., Askarov Sh.I., Norkulov N. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon. phys. status solidi. 1994. 142. P. 339-346. https://doi.org/10.1002/pssa.2211420206

11. Bakhadyrkhanov M.K., Isamov S.B., Zikrillayev N.F., Tursunov M.O. Anomalous photoelectric phenomena in silicon with nanoclusters of manganese atoms. Fizika tekhnika poluprovodnikov. 2021. 55, Issue 6. P. 489-492 (in Russian).

12. Mil'vidskii M.G., Chaldyshev V.V. Nanometer-size atomic clusters in semiconductors - a new approach to tailoring material properties. Semiconductors. 1998. 32, Issue 5. P. 457-465. https://doi.org/10.1134/1.1187418