¹Karakalpak State University, Uzbekistan, Nukus,
E-mail: kanatbay.ismailov@gmail.com
²Tashkent State Technical University,
100095, Uzbekistan, Tashkent, Universitetskaya str., 2,
E-mail: xolmurodov.iliev@tdtu.uz
³Termez State University,
190111, Uzbekistan, Termez, Barkamol avlod str., 43
E-mail: mtursunov@tersu.uz

Abstract. Formation of complexes of impurity Mn atoms with impurity atoms of group VI elements (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place, which possibly leads to formation of new Si2BVI++Mn binary unit cells in the silicon crystal lattice. It has been shown that in the samples Si<S, Mn>, Si<Se, Mn> and Si<Te, Mn>, an intense complex formation occurs at the temperatures 1100, 820 and 650°C, respectively.

Keywords: silicon, electrically neutral molecule, diffusion, thermal annealing.

Full Text (PDF)

References

Back to Volume 24 N3