Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (3), P. 275-281 (2022).

Continuous wave and pulsed EPR study of Cd1-xMnxTe crystals with different Mn content

D.V. Savchenko1,2,*, M.K. Riasna1, M.V. Chursanova1, T.V. Matveeva1, N.A. Popenko3, I.V. Ivanchenko3, E.N. Kalabukhova4

1National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”
37, prosp. Peremohy, 03056 Kyiv, Ukraine
2Institute of Physics of the CAS, 2 Na Slovance, 182 21 Prague, Czech Republic
3O. Usikov Institute for Radiophysics and Electronics, NAS of Ukraine
12, Proskura str., 61085 Kharkiv, Ukraine
4V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prosp. Nauky, 03680 Kyiv, Ukraine
*Corresponding author e-mail:

Abstract. The cadmium manganese telluride (Cd1–xMnxTe) crystals (x < 0.001 and x = 0.02, 0.04, 0.1) grown using the Bridgman method were studied by applying continuous wave and pulsed electron paramagnetic resonance (EPR) spectroscopy in the wide temperature range. The Cd1–xMnxTe crystals with x < 0.001 revealed the EPR spectrum from isolated Mn2+ with g⊥ = g∥ = 2.0074(3), |A⊥| = |A∥| = 56.97 ⋅ 10–4 cm–1, |a| = 30.02⋅10–4 cm–1, while Cd1–xMnxTe crystals with x = 0.02…0.04 are characterized by two single broad isotropic EPR lines of Lorentzian shape (g ~ 2.009 and g ~ 1.99) due to Mn clusters of different sizes. The EPR spectrum of Cd1–xMnxTe crystals with x = 0.01 consists of the single broad line at g ~ 2.01 due to higher level of homogeneity inherent to these crystals. The temperature dependence of spin relaxation times for the isolated Mn2+ center in the Cd1–xMnxTe crystals with x < 0.001 has been described using the conceptions of Orbach process for TM–1 and two-phonon Raman process for T1–1.

Keywords: EPR, spin relaxation time, manganese, cadmium manganese telluride.

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