Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (3), P. 274-279 (2024).
Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine Abstract.
In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the distribution of radiative recombination centers in SiC/por-SiC/Dy2O3 structures. The analysis of photoluminescence spectra of these structures excited by the radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate has shown that the short-term action of microwave radiation leads to the migration of dislocations and, as a consequence, to redistribution of radiative recombination centers and local symmetry change.
Keywords: athermal microwave action, rare-earth oxides, photoluminescence, silicon carbide. This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.
|