Semiconductor Physics, Quantum Electronics & Optoelectronics, 27 (3), P. 274-279 (2024).
DOI: https://doi.org/10.15407/spqeo27.03.274


Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation

O.B. Okhrimenko*, Yu.Yu. Bacherikov, O.F. Kolomys, D.M. Maziar, V.V. Strelchuk, V.K. Lytvyn, R.V. Konakova

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
*Corresponding author e-mail: olga@isp.kiev.ua



Abstract. In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the distribution of radiative recombination centers in SiC/por-SiC/Dy2O3 structures. The analysis of photoluminescence spectra of these structures excited by the radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate has shown that the short-term action of microwave radiation leads to the migration of dislocations and, as a consequence, to redistribution of radiative recombination centers and local symmetry change.

Keywords: athermal microwave action, rare-earth oxides, photoluminescence, silicon carbide.

Full Text (PDF)


Back to Volume 27 N3

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.