¹Laboratory of Engineering and Materials (LIMAT), Faculty of Sciences Ben M’sik,
Hassan II University of Casablanca, Morocco
²Institute of Clinical and Preventive Medicine, University of Latvia, LV-1586 Riga, Latvia
³College of Physics and Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P.R. China
*Correspondence author e-mail: fatihidounia31@gmail.com

Abstract. Copper indium gallium selenide solar cells (CIGS-SCs) have gained attention due to their cost-effectiveness and environmentally friendly characteristics, making them a promising option for future electricity generation. The efficiency of CIGS-SCs can be enhanced by adding a back surface field layer (BSFL) under the absorber layer to reduce recombination losses. In this study, the electrical parameters, such as the series resistance, shunt resistance, and ideality factor, are calculated for CIGS-SCs with an advanced design, using the SC capacitance simulator (SCAPS) software. The detailed model used in the simulations considers the material properties and fabrication process of BSFL. By utilizing a reduced graphene oxide (rGO) BSFL, a conversion efficiency of 24% and a significant increase in the fill factor are predicted. This increase is primarily attributed to the ability of the rGO layer to mitigate the recombination of charge carriers and establish a quasi-ohmic contact at the metal-semiconductor interface. At higher temperatures, BSFL can become less effective due to an increased recombination and, in turn, a decreased carrier lifetime. Overall, this study provides valuable insights into the underlying physics of CIGS-SCs with BSFL and highlights the potential for improving their efficiency through advanced design and fabrication techniques.

Keywords: CIGS, solar cells, reduced graphene oxide (rGO), back surface layer, SCAPS.

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