Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (3), P. 284–291 (2025).
DOI: https://doi.org/10.15407/spqeo28.03.284
Parameter determination of ion-implanted layers of single crystals by integrated dynamical diffractometry
G.I. Nyzkova1, B.M. Romanyuk2, O.V. Dubikovskyi2, O.Yo. Gudymenko2, O.A. Kulbachynskyi2, A.O. Bilotska1, T.P. Vladimirova1, Ya.V. Vasylyk1, O.S. Skakunova1, I.I. Demchik1, L.I. Makarenko1, S.V. Lizunova1, I.M. Zabolotny1, V.V. Molodkin1, O.S. Kononenko1, V.V. Lizunov1
1G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36 Academician Vernadsky Boulevard, 03142 Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine
*Corresponding author e-mail: nizkova@imp.kiev.ua
Abstract. X-ray diffraction methods are highly informative for investigation of crystal structure imperfections. They are widely applied to determine the characteristics of structural defects in various materials. In this work, by processing experimentally measured azimuthal dependences of the total integrated intensity of dynamical diffraction for three asymmetric Bragg reflections for a Si single crystal irradiated with boron ions, the thicknesses of the amorphous absorbing surface layer and the kinematically scattering layer as well as the concentration of randomly distributed dislocation loops in the dynamically scattering volume located under the above-mentioned disturbed surface layers are obtained.
Keywords: phase variation diagnostics, azimuthal dependence, defects.
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