Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 283-291 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.283

Metastable defects in III-nitrides (Review)

A.E. Belyaev

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
E-mail: belyaev@isp.kiev.ua

Abstract. Metastable states in III-nitrides (AlN, GaN, InN and their alloys) are an important topic in materials science, device physics, and epitaxial growth because these compounds exhibit multiple competing crystal structures, defect configurations, and phase behavior that strongly affect optical, electrical, and mechanical properties. The paper is a concise, structured review-style summary covering the main concepts, mechanisms, experimental signatures, theoretical approaches, and device implications. Actions that should be proposed to avoid the effects of metastable defects in III-nitride based devices are discussed. Avoiding metastable defect effects in III-nitride devices requires preventing their formation (through growth and doping control), stabilizing their electronic configuration (by annealing or optical activation), and designing device architectures that minimize field- or temperature-induced transitions. These combined actions ensure consistent carrier density, higher mobility, and superior optical and electrical reliability in GaN-, AlGaN-, and InGaN-based devices.

Keywords: metastable defects, III-nitrides, electronic configuration, field- or temperature-induced transitions.