Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 311-316 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.311

Effect of inter-impurity interaction on concentration of electroactive manganese impurity atoms in silicon

N.F. Zikrillaev¹, K.A. Ismailov², S.B. Isamov¹, B.K. Ismaylov^1,2*, Kh.F. Zikrillaev¹, U.Kh. Sodikov¹, M.M. Shoabdurakhimova¹

¹Tashkent State Technical University named Islam Karimov, 2 Universitetskaya Street, 100095 Tashkent, Uzbekistan
²Karakalpak State University named after Berdakh, 1 Ch. Abdirov Street, 230112 KAR, Nukus, Uzbekistan
^*Corresponding author e-mail: ismaylovb81@gmail.com; i.bayram@karsu.uz

Abstract. Influence of the concentration of electroactive manganese impurity on interatomic interactions in single-crystalline p-type silicon initially doped with boron was investigated. The electrophysical parameters of silicon samples subjected to diffusion doping at a given manganese vapor pressure and subsequent thermal annealing were studied. It was found that almost all of the manganese atoms incorporated in KDB-1 grade p-type silicon with boron concentration N_B ≥ 2·10¹⁶ cm^–3 become electroactive. For theoretical calculations, the concentration value was set equal to the solubility limit of manganese atoms in silicon. At the same time, the concentration of the electroactive manganese atoms in the n-type silicon with phosphorus concentration N_P ≈ 10¹⁶ cm^–3 did not exceed 3·10¹⁴ cm^–3. It was shown that the electroactivity of manganese impurity atoms is defined not only by thermodynamic parameters of diffusion but also by the type and concentration of the initial donor or acceptor impurity. It was established that boron atoms can act as nucleation centers for manganese nanoclusters, and these nanoclusters significantly affect the electrical properties of the original silicon. The developed two-stage low-temperature diffusion technology suppresses silicide formation and ensures uniform distribution of electroactive manganese atoms at maximum concentration. The obtained results are of interest for creating nanostructured silicon with tailored electrical, photovoltaic, optical, and magnetic properties, promising for use in electronics.

Keywords: silicon, manganese, boron, phosphorus, inter-impurity interaction, diffusion, concentration of electroactive impurity, nanoclusters.