Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 323-331 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.323

Non-equilibrium processes of defect transformations in semiconductors stimulated by non-thermal action of microwave electromagnetic radiation and magnetic fields

G.V. Milenin¹, R.А. Redko^1,2,3,4

¹V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine,
45 Nauky Avenue, 03028 Kyiv, Ukraine
²Department of Mathematics, Kyiv School of Economics, 3 Mykoly Shpaka Street, 03113 Kyiv, Ukraine
³Department of General Physics and Modeling of Physical Processes, National Technical University of Ukraine
“Igor Sikorsky Kyiv Polytechnic Institute”, 37 Beresteyskyi Avenue, 03056 Kyiv, Ukraine
⁴State University of Information and Communication Technologies, 7 Solomenska Street, 03110 Kyiv, Ukraine
^*Corresponding author e-mail: milenin.gv@gmail.com, redko.rom@gmail.com

Abstract. Non-thermal action of magnetic and microwave electromagnetic fields on semiconductor crystals is shown to cause transition of defect ensembles from a thermodynamically equilibrium state to a non-equilibrium one. After the external fields cease to act, a process of thermally activated displacement, namely relaxation of the defect ensemble to the thermodynamically equilibrium state, which is characterized by a relaxation time, is observed. A criterion of the loss of stability of the equilibrium state by defects is formulated allowing one to determine the threshold values of external field parameters that cause formation of a non-equilibrium state of a defect system in a semiconductor structure. Electroresonance mechanisms of creating the non-equilibrium state of linear and point defect ensembles in semiconductors are presented. It is proven that the relaxation of a defect system over time is described by the Weibull–Gnedenko distribution function, the scale parameter of which represents the relaxation time of the defect ensemble from the non-equilibrium state to the equilibrium one. The results of the experimental studies of the relaxation processes of integrated photoluminescence in n-GaAs and n-GaN structures stimulated by non-thermal treatments with microwave radiation are shown to agree with the theoretical concepts.

Keywords: semiconductor, defect, equilibrium state, non-equilibrium state, microwave radiation, magnetic field, resonance phenomena, random event, Weibull–Gnedenko distribution, relaxation, relaxation time, photoluminescence.