Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 332-335 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.332

EPR properties of MnGaInS₄ single crystal

N.N. Niftiyev

Azerbaijan State Pedagogical University, Az-1000 Baku, Azerbaijan
E-mail: niftiyevnamiq7@gmail.com

Abstract. The EPR properties of MnGaInS₄ single crystal were investigated within the temperature range 5.6...103 K. At low temperatures (5.6 K), the crystal is in the antiferromagnetic phase; the line is broad (ΔH ≈ 234 G) and Gaussian in shape. With increasing the temperature, the line narrows and becomes Lorentzian in shape, which indicates an increase in spin-lattice interactions. The temperature dependence of the resonance line width is explained by the Kubo–Anderson model; the relaxation time τ is short at low temperatures (τ ≈ 2.4·10^–10 s) and long at high temperatures. With increasing the temperature, the g-factor increases from 1.99 to 2.00, due to the thermal expansion of the crystal lattice and the strengthening of spin-orbit interactions. The intensity of the EPR signal increases with increasing the temperature because, as the temperature increases, more spin centers participate in the resonance process by overcoming the energy barrier. Thus, temperature-dependent magnetic phase transitions, spin dynamics, and g-factor variation in MnGaInS₄ single crystal have been clearly identified. These results indicate the material potential for future magnetic and spintronic applications.

Keywords: MnGaInS₄, EPR, g-factor, resonance linewidth, relaxation time.