Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 336-343 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.336

A perspective on doping diamond for quantum computing applications

I. Avradopoulos¹, V. Giosis¹, K. Katsanos¹, A. Chroneos^1,2, R.V. Vovk³

¹Department of Electrical and Computer Engineering, University of Thessaly, 38333 Volos, Greece
²Department of Materials, Imperial College London, London SW7 2BP, United Kingdom
³V.N. Karazin Kharkiv National University, Svobody sq., 61022 Kharkiv, Ukraine
Corresponding author e-mail: rvvovk2017@gmail.com

Abstract. Diamond is not a mainstream material for nanoelectronic applications, despite its remarkable physical properties. There are many issues in developing efficient semi-conductor devices based on diamond. In this perspective, we focus on the introduction of dopants using various doping techniques (thermal doping diffusion, delta doping, chemical vapour deposition (CVD), etc). Forming n-type doped diamond using conventional dopants such as phosphorus (P) is challenging. Nitrogen (N) can be implemented with boron (B) using co-doping. Forming p-type doped regions in diamond is less problematic compared to n-type doped regions. This is because B is an appropriate acceptor dopant, and additionally there is the possibility of forming H-diamond, which is also an acceptor. Presently, the dream of a diamond transistor has given way to its application in the field of quantum computing. In the current context, we consider n-type and p-type doping in diamond, focusing on the difficulties of n-type doped diamond. We consider the integration of diamond in quantum computing with account of the nitrogen-vacancy pairs.

Keywords: diamond, doping, point defects, dislocations, defect clusters, magnetic field, microwave radiation.