Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (3), P. 383-388 (2026).
DOI: https://doi.org/10.15407/spqeo29.03.383

Radiation resistance of electrical parameters of silicon-based PIN photodiodes

A. Sadigov^1,2, A. Mammadli^1*, G. Ahmadov^1,2, F. Ahmadov^1,4, D. Berikov³, E. Mustafayev¹, A. Temirzhanov³, K. Mendibayev³, A. Arystambayeva³, M. Kenessarin³, K. Huseynzada⁵, Yu.Yu. Bacherikov^6,7

¹Institute of Physics – Ministry of Science and Education, Huseyn Javid 131, Yasamal, Baku, AZ1141, Azerbaijan
²Department of Nuclear Research of IDDA, Baku Shamakhy HW 20 km, Gobu sett. of Absheron dist.,
AZ 0100 Baku, Azerbaijan
³The Institute of Nuclear Physics, Ibragimova 1, 050032 Almaty, Kazakhstan
⁴Azerbaijan University of Architecture and Construction, Ayna Sultanova Street 5, Baku AZ1073, Azerbaijan
⁵Mingachevir State University, D. Aliyeva Street 21, Mingachevir AZ4500, Azerbaijan
⁶V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 Nauky Avenue, 03028 Kyiv, Ukraine
⁷V.I. Vernadsky Institute of General and Inorganic Chemistry, NAS of Ukraine,
32/34, Academician Palladin Avenue, 03142 Kyiv, Ukraine
^*Corresponding author e-mail: arzu.mammadli06@gmail.com

Abstract. This study investigates radiation resistance of principal electrical parameters of silicon-based PIN photodiodes subjected to high-dose gamma irradiation. The Si PIN photodiodes with an active area of 3.7×3.7 mm² fabricated by ion implantation technology were exposed to Co-60 gamma radiation at accumulated doses of 10, 40, 70, and 100 kGy. The evolution of dark current (I_dk), capacitance-voltage (C–V) characteristics, pulse amplitude, and energy resolution was systematically analyzed. The experimental results demonstrated that the full capacitance of the photodiodes remained stable (182 pF) even after 100 kGy irradiation, indicating strong structural robustness of the depletion region. In contrast, the dark current exhibited a dose-dependent increase, rising by a factor of 1.6 at 100 kGy under 50 V reverse bias. This increase was attributed to radiation-induced generation-recombination centers formed within the intrinsic layer of the device. Moreover, gamma irradiation resulted in a 14.5 ± 1.4% reduction in pulse amplitude and a 20.5% ± 2% change in energy resolution, reflecting the impact of defect-induced carrier trapping and recombination processes. Despite these effects, the photodiodes maintained operational stability after prolonged irradiation and subsequent monitoring. The obtained results confirm that silicon PIN photodiodes fabricated by ion implantation exhibit high radiation tolerance and may be considered promising candidates for operation in high-radiation environments, including radiation monitoring and dosimetry applications.

Keywords: Si-PIN, PIN photodiodes, dark current, gamma irradiation.