Noise spectra and dark current investigations in n+-p-type Hg1-xCdxTe (x @ 0.22) photodiodes

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2 (3), P. 21-25 (1999)
https://doi.org/10.15407/spqeo2.03.021

PACS: 85.60.D, 07.57.K, 85.60.G, 73.40

Noise spectra and dark current investigations in n⁺-p-type Hg_1-xCd_xTe (x ~0.22) photodiodes

Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin

Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, №3. - P.21-25. - Engl. Il.: 4. Ref.: 16.

Abstract. The dark current and noise spectra were investigated in Hg1-xCdxTe (x~0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases UЈ0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 104 Hz. The decrease of tunneling current results in the decrease of 1/f noise.

Keywords: long wavelength intra-red photodiode, trap assisted tunneling, 1/f noise.

[Contents]
Full text in PDF (Portable Document Format) are available for free. [PDF 238K]

Back to Volume 2 N3

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.