https://doi.org/10.15407/spqeo3.04.453
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 4. P. 453-455.
PACS: 72.40.
The influence of non-uniform deformation on
photoelectric properties of crystalline silicon
O.V. Vakulenko, S.V. Kondratenko
Taras Shevchenko Kyiv Univ., 6 Glushkova Prosp., 252127 Kyiv, Ukraine
E-mail: kondr@hq.ups.kiev.ua.
Abstract. Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the stretched surface. Under constant deformation conditions the PME spectrum form is changed only in the long-wave region. Obtained data are explained by diffusion length decreasing as a consequence of decreasing diffusion coefficient under the influence of a strain gradient.
Keywords: photoconductivity, photomagnetic effect, bend deformation, crystalline silicon
Paper received 04.08.00, revised manuscript received 12.09.00, accepted for publication 12.12.00.
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