https://doi.org/10.15407/spqeo3.04.456
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 4. P. 456-459.
PACS: 61.43.D, 64.70.D,66.20
Structural changes in molten CdTe
L. Shcherbak1, P. Feychuk1, Yu. Plevachuk2, Ch. Dong3 and V. Sklyarchuk21Chemical Department, University of Chernivtsi, 2, vul. Kotsyubinskogo, 274012 Chernivtsi, Ukraine
2 Institute of Applied Physics, Ivan Franko National University, 49 General Chuprynka st. 79044 Lviv, Ukraine
3 Institute of Physics, Technical University Chemnitz, D-09107 Chemnitz, Germany
Abstract. Shear viscosity (h) measurements of CdTe and CdTe + 2 at% In melts were performed using a cup viscometer up to 1403 K. The h(T) dependencies obtained during slow heating and cooling (Vh/c = = 10-15 K/h) show hysteresys near a melting point. According to the h(T) dependencies data drastic changes the melts structure occurred at 1376 K both during the heating and cooling of the melts.
Keywords: CdTe, viscosity, structural changes, melts
Paper received 04.07.00; revised manuscript received 09.10.00; accepted for publication 12.12.00.
Full text in PDF (Portable Document Format) are available for free. [PDF 90K]
The copies of separate papers in PDF format can be ordered using the address
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.