Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (4), P. 460-462 (2000)
https://doi.org/10.15407/spqeo3.04.460

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 4. P. 460-462.

PACS: 70.61.J

Growing Cd0.25Hg0.75Se layers by laser evaporation
in static vacuum

B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy

Abstract. Cd0.25Hg0.75Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg1-xSe solid solutions close to bulk material by their properties.

Keywords: semiconductor film, laserevaporation, electron diffraction, Hall coefficient.

Paper received 22.10.99; revised manuscript received 04.11.00; accepted for publication 12.12.00.

 


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