Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 4. P. 496-499.

PACS: 42.79.K, 85.40.H

Metal-dielectric black matrix for display devices

P. Shepeliavyi, K. Michailovs'ka, I.n Indutnyy, O. Kudryavtsev
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prospekt Nauki, 45, Kyiv, 03028, Ukraine.

Abstract. Technology of metal-dielectric coating deposition for manufacturing a light-absorbing black matrix on a panel of color cathode-ray tubes is described. The coating is prepared using thermo-vacuum evaporation of SiO-Cr mixture. That yields in a thin-layer non-uniform (by its composition) structure SiO_x-Cr. It is shown that the coating prepared in this way is achromatic and has low reflectivity (~1%) from the side of a transparent panel. The index of diffuse light scattering measured for such metal-dielectric coating does not exceed 0.1% in the spectral range of 400-700 nm.

It is shown that black matrix based on the coating SiO_x-Cr can be produced using the methods of direct or lift-off photolithography, with organic or non-organic photoresist. Color CRT with these metal-dielectric black matrixes on their panels have increased image contrast as compared with the colloid-graphite ones.

Keywords: color cathode-ray tube, light-absorbing matrix, non-organic photoresist.

Paper received 04.11.00; revised manuscript received 11.11.00; accepted for publication 12.12.00.