Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (4), P. 554-557 (2000)
https://doi.org/10.15407/spqeo3.04.554


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 4. P. 554-557.

PACS: 61.10.N, 68.65

Simulation of low angle X-ray diffraction 
on multilayers subjected to diffusion

A.G. Fedorov

Institute for Single Crystals, Lenin Ave. 60, 61001 Kharkov, Ukraine 
fedorov@xray.isc.kharkov.com


Abstract. Calculative method based on the Riccatti type differential equation was tested for simulation of low angle X-ray diffraction patterns from the one-dimensionally ordered multilayer. Some peculiarities of diffraction were revealed connected with asymmetrical distortion of the multilayer profile due to different processes on the layer boundaries.

Keywords: multilayers, X-ray diffraction

Paper received 12.09.00; revised manuscript received 13.10.00; accepted for publication 12.12.00.

 


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