Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 249-252.

 PACS: 68.55.L; 77.84.B

S.F. Avramenko, V.S. Kiselev
Special Bureau for Design and Technology with Pilot Production Department of the Institute
of Semiconductor Physics, NAS of Ukraine, 4 Lysogorskaya St., Kyiv, 03028, Ukraine
Fax: (380-44) 265-19-57; E-mail: kisvs@yandex.ru

B.N. Romanyuk, M.Ya. Valakh
Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
Tel.: (380-44) 265-61-82; Fax: (380-44) 265-83-42; E-mail: valakh@semicond.kiev.ua

Abstract. The implanted layer resistance R/o thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30^o and 500 ^oC with Al ions annealed at 1600 to 2000 ^oC. The objective was to study processes of defect annealing and activation of implanted aluminum to determine the optimal parameters of the postimplantation annealing mode. It is shown that processes of radiation defect annealing and implanted aluminum activation are characterized by essentially different times that depend on the annealing and implantation conditions. Measurements of the open-circuit photovoltage U enable one to check the aluminum activation process and optimize the annealing conditions.

Keywords: silicon carbide, implantation, annealing.

Paper received 26.07.01; revised manuscript received 17.10.01; accepted for publication 12.12.01.

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