Study of postimplantation annealing of SiC S.F. Avramenko, V.S. Kiselev, B.N. Romanyuk, M.Ya.Valakh
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 249-252 (2001).
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact L.V. Shekhovtsov
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 253-259 (2001).
Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons V.M. Vasetskii, V.N. Poroshin, V.A. Ignatenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 260-263 (2001).
Behaviour of manganese impurity in b-ZnP2 M. Kakazej, A. Kudin, M. Pinkovs’ka
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 264-272 (2001).
Density of heavy hole states of Hg1-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration V.V. Bogoboyashchyy
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 273-277 (2001).
Investigations of impurity gettering in multicrystalline silicon A.A. Evtukh, V.G. Litovchenko, A.S. Oberemok, V.G. Popov, Yu. V. Rassamakin, B.N. Romanyuk, S.G. Volkov
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 278-282 (2001).
The impact of laser shock waves on anodic oxide – compound semiconductor interface V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 283-286 (2001).
Hopping conductivity in GaSe monocrystals at low temperatures A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 287-289 (2001).
Investigation of ArF* excimer laser VUV radiation action on sapphire S.M. Baschenko, K.S. Gochelashvili, R.M. Zakirov, V.I. Klimov, V.T. Mikhkelsoo, O.M. Prokhorov
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 290-297 (2001).
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 298-300 (2001).
Experimental investigations and computer modelling of the photochemical processes in Ag-As2S3 structurs using surface plasmon resonance spectroscopy V.I. Chegel’, Yu.M. Shirshov, S.O. Kostyukevich, P.E. Shepeliavy, Yu.V. Chegel’
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 301-306 (2001).
The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating O.A. Agueev, A.M. Svetlichny
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 307-312 (2001).
Optical and protective properties of different type diamond and diamond-like carbon films T.V. Semikina, A.N. Shmyryeva
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 313-317 (2001).
Comprehensive studies of defect production and strained states in the silicon epitaxial layers and device structures based on them N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M.Mel’nichenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 318-322 (2001).
Influence of phonon dispersion on exciton damping in ionic crystals N.I. Grigorchuk
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 323-330 (2001).
Microwave-induced optical non-linearity of amino acid crystals L.I. Berezhinsky, G.I. Dovbeshko, V.V. Obukhovsky
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 331-336 (2001).
Features of optical properties of ferromagnetic semiconductors with dynamic laser-induced gratings O.Yu. Semchuk, R.Z. Veskliarskii, K.G. Kosharskii
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 337-342 (2001).
SPR-spectroscopy of protein molecules adsorbed in microwave field L.I. Berezhinsky, V.I. Chegel’, Yu.M. Shirshov, G.I. Dovbeshko, O.V. Melnichuk
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 343-346 (2001).
Optical transmittance of 2D macroporous silicon structures L.A. Karachevtseva, O.O. Lytvynenko, E.O. Malovichko, O.J. Stronska, E.V.Busaneva, O.D. Gorchinsky
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 347-351 (2001).
Thickness dependences of optical constants for thin layers of some metals and semiconductors S.A. Kovalenko, M.P. Lisitsa
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 352-357 (2001).
Dynamics of photoinduced instability in ferroelectric photorefractive crystals A.N. Morozovska, V.V. Obukhovsky, V.V. Lemeshko
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 358-374 (2001).
Electrooptical properties of liquid crystal n-pentil-n,-cyanobifenil with J-aggregates of astrofloxine Yu.P. Piryatinski, M.S. Furier, V.G.Nazarenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 375-382 (2001).
New method of apertured electromagnetic field modeling S. Anokhov, A. Khizhnyak, R. Lymarenko
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 383-388 (2001).
Group delay investigation of N-order chirping mirrors V.V. Lysak, I.A. Sukhoivanov, S.I. Petrov
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 389-390 (2001).
Raman scattering of light in biaxial monocline b-ZnP2 crystals V.O. Gubanov, V.D. Kulakovs’kij, R.A. Poveda, Z.Z. Yanchuk
Semiconductor physics, quantum electronics and optoelectronics, 4 (4), P. 391-393 (2001).
