Semiconductor Physics, Quantum Electronics & Optoelectronics, 4 (4), P. 260-263 (2001)
https://doi.org/10.15407/spqeo4.04.260

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 260-263.

 PACS: 42.65.Hw

Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons

V.M. Vasetskii, V.N. Poroshin, V.A. Ignatenko
Institute of Physics, NAS of Ukraine, 46, Prospect Nauki, Kyiv-39, 03650, Ukraine
Fax: (38 044) 265-15-89, E-mail: poroshin@iop.kiev.ua

Abstract. We have studied backward degenerate four-wave mixing at CO2 laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier heating by infrared radiation.

Keywords: degenerate four-wave mixing, phase conjugation, many-valley semiconductors, intervalley redistribution, carrier heating.

Paper received 13.08.01; revised manuscript received 17.10.01; accepted for publication 12.12.01.


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