Semiconductor Physics, Quantum Electronics & Optoelectronics, 4 (4), P. 264-272 (2001)
https://doi.org/10.15407/spqeo4.04.264


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 264-272.

 PACS: 61.72

Behaviour of manganese impurity in b-ZnP2

M. Kakazej, A. Kudin, M. Pinkovs’ka *, V. Tartachnyk*
National Dragomanov Pedagogical University, 9 Pirogov street, Kyiv, Ukraine,
Ph..221-99-71, Fax: 044-2350300
E-mail: kudin2001@mail.ru

*Scientific Center «Institute for Nuclear Research» NAS of Ukraine,
47 pr. Nauky, Kyiv 03028, Ukraine
Tel. 265-37-49, Fax: 044-265-44-63
E-mail: plitov@kinr.kiev.ua

Abstract. Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure evolution of irradiated and annealed ZnP2 was studied by the method of the paramagnetic probe (Mn 2+).

Keywords: singularity, paramagnetic center, spin - Hamiltonian, defect, intersticial, vacancy, tetrahedron.

Paper received 14.09.01; revised manuscript received 27.11.01; accepted for publication 12.12.01.

 


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