Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 283-286.

V.S. Yakovyna¹, N.N. Berchenko¹, Yu.N. Nikiforov²
1 - Lviv Polytechnic National University, 12 Bandera St., 79013 Lviv, Ukraine
phone +38 (0322) 398-627, fax +38 (0322) 744-300, email yakovyna@polynet.lviv.ua
2 - Ternopil State Technical University, 56 Russka St., 46001 Ternopil, Ukraine

Abstract. The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)Ч10¹¹ cm^-2 under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed.

Keywords: shock wave, HgCdTe, anodic oxide, interface.

Paper received 05.10.01; revised manuscript received 28.11.01; accepted for publication 12.12.01.

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