Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 287-289.

A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova
Institute of Physics of Azerbaijan Academy of Sciences,
H. Javid avenue, 31, Baku-370143, Azerbaijan
Radiation Researches Department of Azerbaijan Academy of Sciences,
H.Javid avenue, 31a, Baku-370143, Azerbaijan
Tel: (99412) 398-318; Fax: (99412) 398-318; E-mail: azerecolab@azarin.com

Abstract. The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31 and 250.0 ohm·cm, concentration of impurities is 10¹⁵ and 2.0ґ10¹⁶ cm^-3, mobilities are equal to 25.0 and 12.0 cm²/V·sec, respectively. It is ascertained that specific resistance weakly depends on temperature at (5…33)K, activation energy of this conductivity is 1.2ґ10^-3 eV, and it is determined by hopping mechanism of charge transfer. At temperatures (33…100)K, activation energy of conductivity is 7.8ґ10^-2 eV, and it is connected with hole transfer in empty band.

Keywords: conductivity, temperature, hopping conductivity, activation energy, specific resis­tance, concentration, mobility, lamellar monocrystals, phonon.

Paper received 25.05.01; revised manuscript received 26.11.01; accepted for publication 12.12.01.

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