https://doi.org/10.15407/spqeo4.04.298
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 298-300.
PACS 61.76.C, 73.40.K, 84.40
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko
Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
Tel.: (380-44) 265-61-82; Fax: (380-44) 265-83-42; E-mail: konakova@isp.kiev.ua
Abstract. For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm2). This correlates with improvement of the TiBx-n-n+-GaAs diode structure parameters after similar microwave treatment.
Keywords: microwave treatment, interface, TiBx film, gettering.
Paper received 08.07.01 ; revised manuscript received 05.12.01; accepted for publication 12.12.01.
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