https://doi.org/10.15407/spqeo4.04.301
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 301-306.
PACS: 68.55; 73.50; 78.66; 81.15
Experimental investigations and computer modeling of the photochemical processes in Ag-As2S3 structures using surface plasmon resonance spectroscopy
Chegel’ V.I., Shirshov Yu.M., Kostyukevich S.O., Shepeliavy P.E., Chegel’ Yu.V.*
Institute of Semiconductor Physics NAS Ukraine, Prospect Nauki, 41, 252650 Kyiv -28.
* National Technical University, Prospect Peremogy, 37, 252056 Kyiv, Ukraine.
Abstract. Surface plasmon resonance (SPR) was first applied for investigation of the initial stage kinetics of the chemical processes in inorganic resist based on thin-film Ag-As2S3 structure. This method enabled to measure optical constants for the super-thin layers (from 0.2 up to 50 nm) and to study the changes in structure and thickness of the films after their exposure with different doses of UV radiation. Computer matching of the experimentally obtained SPR curves enabled to justify the assumption concerning the presence of a thin (close to 0.7-1 nm) intermediate layer with the parameters similar to Ag2S, which is created during formation of the Ag-As2S3 structure, and also estimate its evolution in the course of layers interaction.
Keywords: surface plasmon resonance, chalcogenides, computer matching of curves.
Paper received 19.10.01; revised manuscript received 28.11.01; accepted for publication 12.12.01.
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