https://doi.org/10.15407/spqeo4.04.307
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 307-312.
PACS: 61.72 H, 73.40 Q
The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating
O.A. Agueev, A.M. Svetlichny
Taganrog State University of Radio Engineering, GSP-17A, 44 Nekrasovsky Lane, Taganrog 347915, Russia,
E-mail: ageev@tsure.ru, tel: (863-44) 6-16-11
Abstract. In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO2 structures is done. It is determined that alteration of shape and size of components can change stresses in the silicon substrate by an order, and the increase in heating temperature from 800 to 1100 °C increases the defect formation criterion by two orders. The optimum size and shape alteration range as well as the heating temperature for defect-free thermal treatment of structures are determined.
Keywords: isothermal heating, thermo-elastic stresses, resultant shifting stresses.
Paper received 20.02.01; revised manuscript received 24.10.01; accepted for publication 12.12.01.
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