Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 347-351.

L.A. Karachevtseva, O.O. Lytvynenko, E.O. Malovichko and O.J. Stronska
Institute of Semiconductor Physics, 45 Nauki Prosp., Kyiv-03028, Ukraine
Tel.: 265 9815, Fax: 265 8243, E-mail: kartel@mail.kar.net

E.V. Busaneva and O.D. Gorchinsky
T.Shevchenko Kyiv National University, 64 Volodymyrska Str., Kyiv-03022, Ukraine

Abstract. Optical transmittance by 2D macroporous silicon structures was investigated in direction parallel to pores. Absolute photonic band gap was measured for wavelengths between one and two optical periods of macroporous silicon structure. For wavelengths less than optical period of macropores there are an essential reduction in transmittance of electromagnetic radiation to (3-6)*10^-3 apparently the homogeneous material and the step formation. Transmission spectra of macroporous silicon as well as steps were explained by a model of directed and decay optical modes formed by macroporous silicon as a short wave-guide structure with a large contrast in dielectric constants of the macropore and the silicon matrix.

Keywords: macroporous silicon, optical transmittance, photonic band gap, wave-guide.

Paper received 25.07.01; revised manuscript received 18.10.01; accepted for publication 12.12.01.

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