Semiconductor Physics, Quantum Electronics & Optoelectronics, 4 (4), P. 352-357 (2001)
https://doi.org/10.15407/spqeo4.04.352


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 4. P. 352-357.

 PACS: 78.66

Thickness dependences of optical constants for thin layers of some metals and semiconductors

S.A. Kovalenko, M.P. Lisitsa

Institute of Semiconductor Physics, NAS of Ukraine, Prospect Nauki 41, Kiev, 03028, Ukraine

Abstract. The review comprises investigations devoted to determination of refractive index and absorption coefficient dependences on thickness for thin films of metals and atomic semiconductors.
It has been shown that erroneous results were obtained in many papers and correct interpretation of the latter is absent. The reason that braked the solution of the problem of dimensional optical phenomena in thin layer physics was ascertained.

Keywords: thin films, refractive index and absorption coefficient, thickness.

Paper received 10.08.01; revised manuscript received 26.11.01; accepted for publication 12.12.01.

 


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