https://doi.org/10.15407/spqeo5.04.347
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 347-352.
PACS: 72.10.-d, 73.63.Hs
Alloy scattering
in quantum well wire structures of semiconductor ternaries
G.B. Ibragimov
Institute of Physics, Azerbaijan National
Academy of Sciences, 33 Javid av., 370143 Baku, Azerbaijan
E-mail: guseyn@physics.ab.az, guseyn_gb@mail.ru
Abstract. We studied the effect of
the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional
semiconductor. Performed were analytical calculations of the alloy-disorder-limited
momentum relaxation time for carrier scattering in a cylindrical quantum
wire using modeling wave functions, when the transverse part of the carrier
wave function is taken as a Bessel function. It is found that the one-dimensional
mobility is significantly greater than two-dimensional one. It is shown
that the alloy-disorder-scattering-limited mobility increases with the
increasing wire radius and increases with the increasing temperature.
We compare our results with different scattering mechanisms for one-dimensional
systems. Results are also included for the alloy composition dependence
of the mobility.
Keywords:
electron scattering, quantum well, quantum wire.
Paper received 10.07.02; accepted
for publication 17.12.02.
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