High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix V.V. Strelchuk, M.Ya. Valakh, M.V. Vuychik, S.V. Ivanov, P.S. Kop'ev, T.V. Shubina
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 343-346 (2002).
Alloy scattering in quantum well wire structures of semiconductor ternaries G.B. Ibragimov
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 347-352 (2002).
Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors K.D.Glinchuk, A.V. Prokhorovich
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 353-361 (2002).
Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS D.M. Freik, L.I. Nykyruy, V.M. Shperun
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 362-367 (2002).
Concentration anomaly of heat capacity in PbTe based solid solutions E.I. Rogacheva, N.A. Sinelnik, I.M. Krivulkin
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 368-372 (2002).
Temperature dependences of SnTe linear expansion coefficient E.I. Rogacheva, V.P. Popov, O.N. Nashchekina
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 373-377 (2002).
Polyassociative thermodynamical model of A2B6 semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 1. Phase equilibria in initial two-component systems. Hg-Te system P.P. Moskvin, L.V. Rashkovets'kyi, S.V. Kavertsev, G.I. Zhovnir, A.O. Ruden'kyi
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 378-384 (2002).
Polarization properties and a local structure of (GeSe2)x(Sb2Se3)1-x glasses V.I. Malesh, V.V. Rubish, I.I. Shpak, V.M. Rubish, P.P. Puha
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 385-390 (2002).
Effect of microwave radiation on optical transmission spectra in SiO2/SiC structures Yu.Yu. Bacherikov, R.V. Konakova, E.Yu. Kolyadina, A.N. Kocherov, O.B. Okhrimenko, A.M. Svetlichnyi
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 391-394 (2002).
Photoelectric properties of metal-porous silicon-silicon planar heterostructures A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 395-397 (2002).
Noise in HgCdTe LWIR arrays F.F. Sizov, A.G. Golenkov, V.V. Zabudsky, V.P. Reva
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 398-402 (2002).
On a doped transition layer in the space charge region of Schottky contact L.V. Shekhovtsov
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 403-405 (2002).
Method of low-temperature rise of laser diode quality A.M. Kamuz, P.Ph. Oleksenko, O.A. Kamuz, V.G. Kamuz
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 406-411 (2002).
Investigations of characteristics of metal film based pyroelectric detectors implanted by Ar+ ions V.O. Lysyuk, L.V. Poperenko, V.S. Staschuk
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 412-416 (2002).
Influence of Mn and Cr impurities on quasi-surface exciton states of BiI3 layered single crystals V.G. Dorogan, V.O. Zhydkov, F.V. Motsnyi
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 417-419 (2002).
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 420-424 (2002).
Laser- and g-induced optical absorption of indium-doped sodium-borate glasses A.V. Kopyshinsky, B.A. Okhrimenko, S.E. Zelensky, B.O. Danilchenko, O.P. Shakhov
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 425-427 (2002).
Modified optical OR and AND gates A. Srinivasulu
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 428-430 (2002).
Correlation method for pattern recognition P.V. Yezhov, A.V. Kuzmenko, V.A. Komarov
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 431-433 (2002).
Investigation of synthesis peculiarities inherent to computer-generated holograms of 3D images V.I. Girnyk, S.A. Kostyukevich, P.E. Shepeliavyi, A.V. Kononov, I.S. Borisov
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 434-441 (2002).
Control circuits for LED positional indicator A.V. Bushma, G.A. Sukach, L.A. Mischenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 442-448 (2002).
A universal automated complex for control and diagnostics of semiconductor devices and structures R.V. Konakova, O.E. Rengevych, A.M. Kurakin, Ya.Ya. Kudryk
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 449-452 (2002).
Conductivity of sandwich-structures based on dye-doped photoconducting and non-photoconducting polymer films N.A. Davidenko, N.A. Derevyanko, L.I. Fenenko, A.A. Ishchenko, G.P. Olkhovik, P.S. Smertenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 453-456 (2002).
Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin
Semiconductor physics, quantum electronics and optoelectronics, 5 (4), P. 457-464 (2002).
