Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 353-361.

PACS: 71.55.E, 78.55.E

Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors
K.D. Glinchuk, A.V. Prokhorovich

Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine

Abstract. Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound shallow acceptors and donors make rather small or dominating contributions into the near-band-edge luminescence spectrum. It is shown (on the basis of an analysis of the near-band-edge luminescence spectrum of semi-insulating GaAs) that it is very probable for intensities of the near-band-edge luminescence lines to be determined by different states (isolated or bound) of shallow acceptors and donors in semiconductors of this type.

Keywords: semiconductors, luminescence, isolated acceptor, bound acceptor, shallow acceptor, shallow donor, GaAs.
Paper received 04.09 .02; revised manuscript received 15.11.02; accepted for publication 17.12.02.

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