Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 362-367.

PACS: 71.15.Cr, 72.10.-d, 72.20.-Dp.

Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS
D.M. Freik, L.I. Nykyruy, V.M. Shperun

Physics-chemical institute at the Vasyl Stefanyk Precarpathian University,
57 Shevchenko Str., 76025 Ivano-Frankivsk, Ukraine,
E-mail: freik@pu.if.ua

Abstract. The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (1016-1020 сm-3) ranges is carried out from the viewpoint of interaction of conductivity electrons with deformation potentials of acoustic and optical phonons, polarizing potential of optical phonons, screening Coulombic and short-range potentials of vacancies. It has been shown that the agreement of theoretical and experimental results takes place when taking into account the carrier scattering both on phonons and ionized vacancies.

Keywords: vacancies, optical and acoustic phonons, lead chalcogenides, scattering mechanism, interaction.
Paper received 03.09.02; accepted for publication 17.12.02.

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