https://doi.org/10.15407/spqeo5.04.391
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 391-394.
PACS: 78.70.Fy, 78.70.Gq
Effect of microwave radiation
on optical transmission spectra in SiO2/SiC structures
Yu.Yu. Bacherikov1,
R.V. Konakova1,
E.Yu. Kolyadina1,
A.N. Kocherov2,
O.B. Okhrimenko1,
A.M. Svetlichnyi2
1 Institute of Semiconductor Physics, NASciences
of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6261; e-mail: olga@isp.kiev.ua
2 Taganrog State Radio Engineering University, 44 Nekrasovskii per., Taganrog
GSP-17A, Rostov Region, Russia
Phone: +(863-44) 6-16-11; e-mail: svetlich@tsure.ru
Abstract. We investigated the effect of microwave radiation on absorption spectra (in 400-800 nm range) and curvature radius of SiO2/SiC structures obtained using traditional thermal oxidation in water vapor at the temperature of 1373 Ê and rapid thermal annealing in dry oxygen at 1273 Ê. From an analysis of the sample optical density and radius of curvature variations with total duration of microwave action, we concluded that the structures obtained using rapid thermal annealing are more stable against microwave action.
Keywords: SiO2/SiC,
rapid thermal annealing, traditional thermal oxidation, optical density,
microwave action, radius of curvature.
Paper received 03.10.02; accepted for publication
17.12.02.
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