Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 395-397.

PACS: 79.60.Jv

Photoelectric properties of metal-porous silicon-silicon planar heterostructures
A.V. Brodovoi1, V.A. Brodovoi2, V.A. Skryshevskyi2, S.G. Bunchuk3, L.M. Khnorozok4

1Institute for Problems of Materials Science, Kyiv, Ukraine
2T. Shevchenko Kyiv National University, Kyiv, Ukraine
3Institute of Semiconductor Physics, 41 prospect Nauky, 03028 Kyiv, Ukraine
4Nizhyn Pedagogical University, Nizhyn, Ukraine

Abstract. Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes.

Keywords: porous silicon, heterostructure, Schottky barrier
Paper received 04.09.02; accepted for publication 17.12.02.

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